Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition.
Identifieur interne : 000158 ( Main/Exploration ); précédent : 000157; suivant : 000159Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition.
Auteurs : RBID : pubmed:24611468Abstract
A simple method of channel passivation and physical definition of solution-processed metal oxide thin-film transistors (TFTs) has been developed for aluminum oxide (AlOx) and indium oxide (InOx) thin films. A photoresist-free-based ultraviolet (UV) patterning process was used to define an InOx layer as the source/drain region and an AlOx layer as a passivation layer on the InOx layer. The Al diffused into the patterned InOx thin film during a thermal annealing step. As an electrode, the patterned InOx thin film had low resistivity, and as a channel, the Al-diffused InOx thin film had a low carrier concentration. Furthermore, the diffused Al behaved as a carrier suppressor by reducing oxygen vacancies within the InOx thin film. We succeeded in forming a coplanar homojunction-structured metal oxide TFT that used the passivation-induced channel-defining (PCD) method with an AlOx/InOx bilayer. The PCD TFT had a field-effect mobility of 0.02 cm(2)/V·s, a threshold voltage of -1.88 V, a subthreshold swing of 0.73 V/decade, and an on/off current ratio of 2.75 × 10(6) with a width/length (W/L) of 2000 μm/400 μm.
DOI: 10.1021/am405712m
PubMed: 24611468
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition.</title><author><name sortKey="Kim, Jung Hyun" uniqKey="Kim J">Jung Hyun Kim</name><affiliation wicri:level="1"><nlm:affiliation>School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.</nlm:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749</wicri:regionArea></affiliation></author><author><name sortKey="Rim, You Seung" uniqKey="Rim Y">You Seung Rim</name></author><author><name sortKey="Kim, Hyun Jae" uniqKey="Kim H">Hyun Jae Kim</name></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1021/am405712m</idno><idno type="RBID">pubmed:24611468</idno><idno type="pmid">24611468</idno><idno type="wicri:Area/Main/Corpus">000124</idno><idno type="wicri:Area/Main/Curation">000124</idno><idno type="wicri:Area/Main/Exploration">000158</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A simple method of channel passivation and physical definition of solution-processed metal oxide thin-film transistors (TFTs) has been developed for aluminum oxide (AlOx) and indium oxide (InOx) thin films. A photoresist-free-based ultraviolet (UV) patterning process was used to define an InOx layer as the source/drain region and an AlOx layer as a passivation layer on the InOx layer. The Al diffused into the patterned InOx thin film during a thermal annealing step. As an electrode, the patterned InOx thin film had low resistivity, and as a channel, the Al-diffused InOx thin film had a low carrier concentration. Furthermore, the diffused Al behaved as a carrier suppressor by reducing oxygen vacancies within the InOx thin film. We succeeded in forming a coplanar homojunction-structured metal oxide TFT that used the passivation-induced channel-defining (PCD) method with an AlOx/InOx bilayer. The PCD TFT had a field-effect mobility of 0.02 cm(2)/V·s, a threshold voltage of -1.88 V, a subthreshold swing of 0.73 V/decade, and an on/off current ratio of 2.75 × 10(6) with a width/length (W/L) of 2000 μm/400 μm.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">24611468</PMID><DateCreated><Year>2014</Year><Month>04</Month><Day>09</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1944-8252</ISSN><JournalIssue CitedMedium="Internet"><Volume>6</Volume><Issue>7</Issue><PubDate><Year>2014</Year><Month>Apr</Month><Day>9</Day></PubDate></JournalIssue><Title>ACS applied materials & interfaces</Title><ISOAbbreviation>ACS Appl Mater Interfaces</ISOAbbreviation></Journal><ArticleTitle>Homojunction solution-processed metal oxide thin-film transistors using passivation-induced channel definition.</ArticleTitle><Pagination><MedlinePgn>4819-22</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/am405712m</ELocationID><Abstract><AbstractText>A simple method of channel passivation and physical definition of solution-processed metal oxide thin-film transistors (TFTs) has been developed for aluminum oxide (AlOx) and indium oxide (InOx) thin films. A photoresist-free-based ultraviolet (UV) patterning process was used to define an InOx layer as the source/drain region and an AlOx layer as a passivation layer on the InOx layer. The Al diffused into the patterned InOx thin film during a thermal annealing step. As an electrode, the patterned InOx thin film had low resistivity, and as a channel, the Al-diffused InOx thin film had a low carrier concentration. Furthermore, the diffused Al behaved as a carrier suppressor by reducing oxygen vacancies within the InOx thin film. We succeeded in forming a coplanar homojunction-structured metal oxide TFT that used the passivation-induced channel-defining (PCD) method with an AlOx/InOx bilayer. The PCD TFT had a field-effect mobility of 0.02 cm(2)/V·s, a threshold voltage of -1.88 V, a subthreshold swing of 0.73 V/decade, and an on/off current ratio of 2.75 × 10(6) with a width/length (W/L) of 2000 μm/400 μm.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Jung Hyun</ForeName><Initials>JH</Initials><Affiliation>School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.</Affiliation></Author><Author ValidYN="Y"><LastName>Rim</LastName><ForeName>You Seung</ForeName><Initials>YS</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Hyun Jae</ForeName><Initials>HJ</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>03</Month><Day>24</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>ACS Appl Mater Interfaces</MedlineTA><NlmUniqueID>101504991</NlmUniqueID><ISSNLinking>1944-8244</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2014</Year><Month>3</Month><Day>24</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>3</Month><Day>12</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>3</Month><Day>13</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>3</Month><Day>13</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/am405712m</ArticleId><ArticleId IdType="pubmed">24611468</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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